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| NTR4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features * * * * Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available V(BR)DSS -20 V http://onsemi.com Applications * Load/Power Management for Portables * Load/Power Management for Computing * Charging Circuits and Battery Protection MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value -20 8.0 -2.4 -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 225 -55 to 150 -2.4 260 W A V C A C A W Unit V V A RDS(ON) TYP 70 mW @ -4.5 V 90 mW @ -2.5 V 112 mW @ -1.8 V ID MAX -3.2 A P-Channel MOSFET S G D MARKING DIAGRAM & PIN ASSIGNMENT 3 3 Drain TR4 W 1 Gate TR4 W = Device Code = Work Week 2 Source 1 2 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) SOT-23 CASE 318 STYLE 21 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device NTR4101PT1 NTR4101PT1G Package SOT-23 SOT-23 Pb-Free Shipping 3000/Tape & Reel 3000/Tape & Reel THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 170 100 300 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Unit C/W 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 (c) Semiconductor Components Industries, LLC, 2004 1 October, 2004 - Rev. 3 Publication Order Number: NTR4101P/D NTR4101P ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 V, ID = -250 mA) Zero Gate Voltage Drain Current (Note 4) (VGS = 0 V, VDS = -16 V) Gate-to-Source Leakage Current (VGS = 8.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (Note 4) (VGS = VDS, ID = -250 mA) Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -1.6 A) (VGS = -2.5 V, ID = -1.3 A) (VGS = -1.8 V, ID = -0.9 A) Forward Transconductance (VDS = -5.0 V, ID = -2.3 A) CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. (VGS = 0 V V, dISD/dt = 100 A/ms, IS = -1.6 A) (VGS = 0 V, IS = -2.4 A) VSD trr ta tb Qrr -0.82 12.8 9.9 3.0 1008 -1.2 15 V ns ns ns nC (VGS = -4.5 V, VDS = -10 V, 4.5 10 ID = -1.6 A, RG = 6.0 W) td(on) tr td(off) tf 7.5 12.6 30.2 21.0 ns (VGS = -4.5 V, VDS = -10 V, ID = -1.6 A) (VDS = -10 V, ID = -1.6 A) (VDS = -10 V, ID = -1.6 A) ( (VGS = 0 V, f = 1 MHz, VDS = -10 V) , , ) Ciss Coss Crss QG(tot) QGS QGD RG 675 100 75 7.5 1.2 2.2 6.5 8.5 nC nC nC W pF VGS(th) RDS(on) 70 90 112 gFS 75 85 120 210 S -0.40 -0.720 -1.5 V mW V(BR)DSS IDSS IGSS -20 -1.0 100 V mA nA Symbol Min Typ Max Unit http://onsemi.com 2 NTR4101P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 VGS = -10 V - -2.4 V -ID, DRAIN CURRENT (AMPS) 8 -2.2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3 1 2 4 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 VDS 20 V TJ = -55C 25C 125C 6 -2.0 V 4 . -1.8 V -1.6 V 2 0 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 7 3 5 -ID, DRAIN CURRENT (AMPS) 9 T = -55C T = 25C VGS = -5.0 V T = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 Figure 2. Transfer Characteristics TJ = 25C VGS = -2.5 V VGS = -4.5 V 2 3 5 4 6 8 7 -ID, DRAIN CURRENT (AMPS) 9 10 Figure 3. On-Resistance vs. Drain Current and Temperature 100000 1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -1.6 A -IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Temperature VGS = 0 V TJ = 150C 1.2 1.0 0.8 0.6 0.4 -50 1000 TJ = 125C 100 10 1.0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTR4101P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 VGS = 0 V C, CAPACITANCE (pF) 800 Ciss TJ = 25C 4.0 QT 3.5 3.0 2.5 2.0 1.5 1.0 VDS Qgs Qgd 600 VGS 400 200 Coss Crss 0 2 4 6 8 10 12 14 16 18 20 0.5 0 0 ID = -1.6 A TJ = 25C 4 6 2 Qg, TOTAL GATE CHARGE (nC) 8 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -10 V ID = -1.6 A VGS = -4.5 V t, TIME (ns) 100 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C 10 td(off) tf tr td(on) 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTR4101P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 A L 3 1 2 BS V G C D H K J DIM A B C D G H J K L S V STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTR4101P ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTR4101P/D |
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